&CONTROL
  title = ' Silicon vbc',
  calculation = 'cp',
  restart_mode = 'restart', 
  ndr = 50,
  ndw = 50,
  nstep  = 50,
  iprint = 50,
  isave  = 50,
  tstress = .TRUE.,
  tprnfor = .TRUE.,
  dt    = 12.0d0,
  etot_conv_thr = 1.d-10,
  prefix = 'si'
  verbosity = 'medium'
/

&SYSTEM
  ibrav = 14,
  celldm(1) = 10.6,
  celldm(2) = 1.0,
  celldm(3) = 1.0,
  celldm(4) = 0.0, 
  celldm(5) = 0.0, 
  celldm(6) = 0.0, 
  nat = 8,
  ntyp = 1,
  nbnd = 16,
  ecutwfc = 16.0,
  ecfixed = 12.0,
  qcutz = 12.0,
  q2sigma = 4.0,
  nr1b= 12, nr2b = 12, nr3b = 12,
/

&ELECTRONS
  emass = 800.d0,
  emass_cutoff = 2.0d0,
  orthogonalization = 'ortho',
  electron_dynamics = 'damp',
  electron_damping = 0.1,
  electron_velocities = 'zero',
/

&IONS
  ion_dynamics = 'none',
  tranp(1) = .true.
  amprp(1) = 0.1
  ion_radius(1) = 0.8d0,
/


ATOMIC_SPECIES
Si  28.08 Si.pz-vbc.UPF

ATOMIC_POSITIONS (crystal)
Si    0.00000     0.00000     0.00000
Si    0.00000     0.50000     0.50000
Si    0.50000     0.00000     0.50000
Si    0.50000     0.50000     0.00000
Si    0.25000     0.25000     0.25000
Si    0.25000     0.75000     0.75000
Si    0.75000     0.25000     0.75000
Si    0.75000     0.75000     0.25000