mirror of https://github.com/abinit/abinit.git
574 lines
17 KiB
TeX
574 lines
17 KiB
TeX
\documentclass[11pt,fleqn]{article}
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\usepackage{bm}
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\hoffset=-0.06\textwidth
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\textwidth=1.12\textwidth
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\voffset=-0.08\textheight
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\textheight=1.16\textheight
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%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%
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\def\n{\noindent}
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\def\dis{\displaystyle}
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\def\bea{\begin{eqnarray}}
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\def\nn{\nonumber\\}
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\def\eea{\end{eqnarray}}
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\def\beq{\begin{equation}}
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\def\eeq{\end{equation}}
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\def\wt#1{\widetilde{#1}}
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%\def\wtt#1{\widetilde{\widetilde{#1}}}
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\def\P{{\bf P}}
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\def\a{{\bf a}}
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\def\b{{\bf b}}
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% \def\E{{\cal E}}
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% \def\EE{{\displaystyle{\pmb{\cal E}}}}
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\def\E{\mathcal{E}}
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\def\EE{\bm{\E}}
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\def\D{{\bf D}}
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\def\G{{\bf G}}
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\def\u{{\bf u}}
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\def\r{{\bf r}}
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\def\rb{{\bar{\bf r}}}
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\def\v{{\bf v}}
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\def\k{{\bf k}}
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\def\R{{\bf R}}
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\def\I{{\bf I}}
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\def\K{{\bf K}}
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\def\A{{\bf A}}
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\def\0{{\bf 0}}
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\def\X{{\bf X}}
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\def\II{{\cal I}}
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\def\bij{{\ev{ij}}}
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\def\bji{{\ev{ji}}}
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\def\sij{{_{ij}}}
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\def\smn{{_{mn}}}
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\def\sLC{_{\rm LC}}
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\def\sIC{_{\rm IC}}
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\def\pb{^{\rm bulk}}
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\def\tm{\widetilde{m}}
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\def\ee{{\varepsilon}}
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\def\pb{\bar{p}}
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\def\eb{\bar{\ee}}
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\def\db{\bar{d}}
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\def\cH{{\cal H}}
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\def\emn{\eta_{\mu\nu}}
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\def\bmn{{_{\mu\nu}}}
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\def\nhat{\hat{\bf n}}
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\def\sa{{_\alpha}}
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\def\sb{{_\beta}}
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\def\sab{_{\alpha\beta}}
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\def\sba{_{\beta\alpha}}
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\def\parx{\partial_{k_x}}
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\def\pary{\partial_{k_y}}
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\def\para{\partial_{k_\alpha}}
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\def\parb{\partial_{k_\beta}}
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\def\park{\partial_{\rm k}}
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\def\partx{\wt{\partial}_{k_x}}
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\def\party{\wt{\partial}_{k_y}}
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\def\parta{\wt{\partial}_{k_\alpha}}
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\def\Mt{{\wt{M}}}
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\def\ddkk{\frac{d^2k}{(2\pi)^2}}
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\def\eps{\epsilon}
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\def\epso{\eps_0}
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\def\O{\Omega}
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\def\Oo{\Omega_0}
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\def\Oi{\frac{1}{\Omega}}
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\def\foo{\frac{4\pi}{\O}}
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\def\too{\frac{2\pi}{\O}}
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\def\oof{\frac{\O}{4\pi}}
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\def\bc{_{\rm c}}
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\def\veps{\varepsilon}
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\def\half{{\textstyle{1\over2}}}
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\def\halfsq{{\textstyle{1\over\sqrt{2}}}}
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\def\tpl{{\left(\frac{2\pi}{L}\right)}}
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\def\ltp{{\left(\frac{L}{2\pi}\right)}}
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\def\ket#1{\vert#1\rangle}
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\def\bra#1{\langle#1\vert}
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\def\ip#1#2{\langle#1\vert#2\rangle}
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\def\me#1#2#3{\langle#1\vert#2\vert#3\rangle}
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\def\ev#1{\langle#1\rangle}
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\def\dag{^\dagger}
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\def\pmb#1{\setbox0=\hbox{$#1$}%
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\kern-.01em\copy0\kern-\wd0
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\kern.02em\copy0\kern-\wd0
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\kern-.01em\raise.02em\box0 }
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\def\F{\mathcal{F}}
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\def\Et{{\widetilde{E}}}
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\def\Ft{{\widetilde{\F}}}
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\def\Ut{{\widetilde{U}}}
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\def\Ht{{\widetilde{H}}}
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\def\equ#1{Eq.~(\ref{#1})}
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\def\bmic{_{\rm mic}}
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\def\bmac{_{\rm mac}}
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\def\belec{_{\rm elec}}
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\def\maxE{\max_{\EE}}
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\def\minP{\min_{\P}}
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\def\minD{\min_{\D}}
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\def\maxD{\max_{\D}}
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\def\minu{\min_{u}}
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\def\minv{\min_{v}}
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\def\minw{\min_{w}}
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\def\minp{\min_{p}}
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\def\maxeb{\max_{\eb}}
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\def\minX{\min_{\X}}
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\def\maxX{\max_{\X}}
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\def\gg{g_{ij}}
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\def\ABINIT{{{\tt ABINIT}}}
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%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%
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\begin{document}
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\begin{center}
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{\large\bf
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Notes for the implementation of constant electric field\\
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and constant electric displacement field\\
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methods in \ABINIT }
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\par\bigskip
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D. Vanderbilt and J. Hong\\
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May 21, 2012
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\end{center}
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\vskip 0.4cm
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%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%
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\section{Introduction}
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%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%
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The purpose of these notes is to provide the theoretical
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and formal background for the implementation of the constant
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electric field~\cite{siv} and constant electric displacement
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field~\cite{ssv} methods in the context of first-principles
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electronic structure theory, in particular as they are
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implementated in the \ABINIT~\cite{abinit} code package. The
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full theory can be found in the above two references. Most of
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the present notes are adopted from the supplementary material
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of Ref.~\cite{ssv}.
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%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%
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\section{Energy functionals}
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%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%
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% :::::::::::::::::::::::::::::::::::::::::::
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\subsection{Units}
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% :::::::::::::::::::::::::::::::::::::::::::
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We use Gaussian units so that $\D=\EE+4\pi\P$, etc., where we use
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$\EE$ to denote the electric field. Energies like
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$E$, $U$, $\F$ and $\Ft$ are {\em energies per unit cell} with
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units of energy.
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% :::::::::::::::::::::::::::::::::::::::::::
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\subsection{Energy functionals for constant field calculation}
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% :::::::::::::::::::::::::::::::::::::::::::
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Internal energy $U$ is introduced for constant displacement field
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calculation~\cite{ssv}:
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\begin{equation}
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U(\mathbf{D},v) = E_{\rm KS}(v) +
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\frac{\Omega}{8\pi} [ \mathbf{D} - 4\pi \mathbf{P}(v) ]^2 \;.
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\label{fixd}
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\end{equation}
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$U(\mathbf{D},v)$ depends directly on an external vector parameter
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$\mathbf{D}$, and indirectly on the internal (ionic and electronic)
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coordinates $v$ through the Kohn-Sham energy $E_{\rm KS}$ and the
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Berry-phase polarization $\mathbf{P}$~\cite{kv}.
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The electric enthalpy $\F$ is introduced for constant $\E$
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calculation:~\cite{siv}
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%
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\begin{equation}
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\mathcal{F}(\bm{\mathcal{E}},v) = E_{\rm KS}(v) - \Omega\, \bm{\mathcal{E}} \cdot \mathbf{P}(v)
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\;.
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\label{fixe}
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\end{equation}
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%
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However, according to Ref.~\cite{ssv}, $\Ft$ is a more natural
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functional to be used in constant $\E$ calculation:
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\begin{equation}
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\tilde{\mathcal{F}} = U - \frac{\Omega}{4\pi} \EE \cdot \mathbf{D}
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= \mathcal{F} - \frac{\Omega}{8\pi} \mathcal{E}^2 \;.
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\label{fixet}
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\end{equation}
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%
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(Since $\mathcal{F}$ and $\tilde{\mathcal{F}}$ only differ by a function
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of $\EE$, both of them yield the same equilibrium state at fixed $\EE$.)
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% :::::::::::::::::::::::::::::::::::::::::::
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\section{Strains and strain derivatives}
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%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%
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%==========================================
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\subsection{Introducing reduced field variables}
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%==========================================
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For treating variable strain, it is strongly advantageous to change
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to internal variables.
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To define internal variables for the fields, we let $\a_j$ be the
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lattice vectors, and $g_{ij}=\a_i\cdot \a_j$ be the metric.
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We also let $\b_i$ be dual vectors defined as $\mathbf{a}_i\cdot\mathbf{b}_j=\delta_{ij}$,
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in which the conventional factor of $2\pi$ is {\it not included}, so that
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$\b_i\cdot\b_j=(g^{-1})_{ij}$.
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There are now two choices of reduced variables. Referencing to
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the reciprocal vectors, we get reduced variables
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%
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\beq
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p_i=\Omega\,\b_i\cdot\P
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\qquad \Longleftrightarrow \qquad
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\P=\frac{1}{\O}\,\sum_i p_i\,\a_i \;,
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\eeq
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\beq
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\ee_i=\frac{\Omega}{4\pi}\,\b_i\cdot\EE
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\qquad \Longleftrightarrow \qquad
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\EE=\frac{4\pi}{\O}\,\sum_i \ee_i\,\a_i \;,
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\eeq
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\beq
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d_i = \frac{\Omega}{4\pi}\,\b_i\cdot\D
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\qquad \Longleftrightarrow \qquad
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\D=\frac{4\pi}{\O}\,\sum_i d_i\,\a_i \;.
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\eeq
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%
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where the inverse relations are given to the right.
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The relation $\D=\EE+4\pi\P$ becomes
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%
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\beq
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d_i=\ee_i+p_i.
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\eeq
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%
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The reduced variables $d_i$, $\ee_i$, and $p_i$ have units of charge,
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and are related to the free charge, total charge, and bound charge,
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respectively, found on a surface of orientation $\hat{\b}_i$ if the
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fields vanish in the vacuum.
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Note that, aside from a factor of $e/2\pi$, the $p_i$ are nothing other
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than the Berry phases $\phi_i$ as given, e.g., in Eq.~(23) of
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Ref.~\cite{proper}.
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The other choice is to refer to the real-space lattice
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vectors, i.e.,
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%
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\beq
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\pb_i= 4\pi\,\a_i\cdot\P
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\qquad \Longleftrightarrow \qquad
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\P= \frac{1}{4\pi}\, \sum_i \pb_i\,\b_i \;,
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\eeq
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\beq
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\eb_i= \a_i\cdot\EE
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\qquad \Longleftrightarrow \qquad
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\EE= \sum_i \eb_i\,\b_i \;,
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\eeq
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\beq
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\db_i= \a_i\cdot\D
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\qquad \Longleftrightarrow \qquad
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\D= \sum_i \db_i\,\b_i \;.
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\eeq
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%
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The relation $\D=\EE+4\pi\P$ becomes
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%
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\beq
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\db_i=\eb_i+\pb_i.
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\eeq
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%
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The reduced variables $\pb_i$, $\eb_i$, and $\db_i$ have units of
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electric potential (energy/charge),
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and are related to the potential drop across the unit cell in
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direction $\hat{\a}_i$ arising from the displacement field, the
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total field, and the depolarization field, respectively. They
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are related to the unbarred quantities by
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%
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\beq
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\pb_i=\foo\,\gg\,p_j \;,
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\qquad
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\eb_i=\foo\,\gg\,\ee_j \;,
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\qquad
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\db_i=\foo\,\gg\,d_j \;,
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\eeq
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where an implied sum notation is used.
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The reduced field variables introduced here are closely related to
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those discussed in Ref.~\cite{siv} (see, e.g., Eq.~(5) therein) and
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in Sec.~II.C.3 and the Appendix of of Ref.~\cite{wvh}.
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Eqs.~(A4) and (A5) of Ref.~\cite{wvh} introduce field
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variables that are reminiscent of $p_i$ and $\eb_i$ here,
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but there they were defined in such a way as to coincide
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with the ordinary $\P$ and $\EE$ in the absence of strains or
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rotations. More closely related are the $\P'$ and $\ee_\mu$
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variables defined in (A13) and (A14) of Ref.~\cite{wvh}, which are identical
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to our $p_i$ and $\eb_i$ except for a factor of the charge quantum
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$e$.
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%=======================================
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\subsection{Energy functionals in reduced variables}
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%=======================================
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The equation analogous to Eq.~(\ref{fixe}) is
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%
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\beq
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\F(\eb)=E(p)-\foo\,\gg\,\ee_i\,p_j
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=E(p)-\eb_i\,p_i \;.
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\label{eq:fixeb}
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\eeq
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%
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Note that the natural variable of function $\F$ is $\eb$, not $\ee$.
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That is, the variable conjugate to $p_i$ is
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$(4\pi/\O)\gg\ee_j=\eb_i$. This is the reason why we recommend to
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use $\eb$ in the constant electric field calculation (as implemented
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in \ABINIT).
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We also have
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%
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\beq
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\eb_i=\frac{dE}{dp_i} \;,\qquad p_i=-\,\frac{d\F}{d\eb}\;.
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\eeq
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%
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Then Eq.~(\ref{fixet}) becomes\footnote{The volume $\O$ was erroneously
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omitted in Eq.(33) of the supplementary notes of Ref.~\cite{ssv}.}
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%
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\beq
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\Ft(\eb)=\F(\eb)-\frac{\O}{8\pi}\,(g^{-1})_{ij}\,\eb_i\,\eb_j
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=E(p)-\eb_i\,p_i-\frac{\O}{8\pi}\,(g^{-1})_{ij}\,\eb_i\,\eb_j
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\eeq
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%
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and Eq.~(\ref{fixd}) becomes
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%
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\beq
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U=E+\too\,\gg\,\ee_i\,\ee_i
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=E+\frac{1}{2}\,\eb_i\,\ee_i
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=E+\frac{\O}{8\pi}\,(g^{-1})_{ij}\,\eb_i\,\eb_j\;.
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\label{eq:fixdred}
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\eeq
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We also have
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%
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\beq
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d_i=-\,\frac{d\Ft}{d\eb_i} \;,\qquad \eb_i=\frac{dU}{dd_i} \;.
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\eeq
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For the electric enthalpy function, we can imagine a large number
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$N$ of crystalline cell layers sandwiched between capacitor
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electrodes with a voltage $V$ applied across the electrodes. If
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the cell is strained as a result of the applied voltage or for any
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other reason, the voltage drop per cell will remain $V/N$,
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corresponding to a fixed $\eb$. It thus makes sense that this is
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the natural variable for this kind of problem. On the other hand,
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the variable $\ee$ would change with strain, and so is not an
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appropriate choice of variable in this context.
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On the other hand, instead of a capacitor with fixed voltage
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across the plates, we can imagine a slab with fixed free charge
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on the surfaces. More precisely, it would be fixed free
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charge per surface cell, not per unit area, under general strain
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deformations. This corresponds to fixed $d$, and so it is
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natural that $U(d)$ has natural variable $d$, not $\db$.
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%=======================================
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\subsection{Strain, strain derivatives, and the stress tensor}
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%=======================================
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Let $\emn$ be the strain tensor, and define the stresses
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$\sigma_{\mu\nu}^E=\Omega^{-1}dE/d\emn$,
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$\sigma_{\mu\nu}^\F=\Omega^{-1}d\F/d\emn$,
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$\sigma_{\mu\nu}^{\Ft}=\Omega^{-1}d\Ft/d\emn$, and
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$\sigma_{\mu\nu}^U=\Omega^{-1}dU/d\emn$.
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Then
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%
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\beq
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\frac{d\O}{d\emn}=\O\delta_{\mu\nu}
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\label{AA}
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\eeq
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%
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and
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%
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\beq
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\frac{d\gg}{d\emn} = a_{i\mu}\,a_{j\nu} + a_{j\mu}\,a_{i\nu} \;.
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\label{BB}
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\eeq
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%
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The Hellmann-Feynman theorem applied to the electric enthalphy is
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%
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\beq
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\left(\frac{d\F(\eb,\eta;v)}{d\emn}\right)_{\eb}=
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\frac{\partial \F(\eb,\eta;v)}{\partial\emn} +
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\frac{\partial \F(\eb,\eta;v)}{\partial v}\,\frac{dv}{d\emn}
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\eeq
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%
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but since $\partial \F/\partial v=0$ at the equilibrium state of the internal
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variables $\{v\}$, the second term vanishes. Using
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$\F(\eb) =E(p)-\eb_i\,p_i$ we find
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%
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\beq
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\frac{d\F(\eb,\eta)}{d\emn}=\frac{\partial E(p,\eta)}{\partial\emn}
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-\eb_i\,\frac{\partial p_i}{\partial\emn} \;.
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\eeq
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%
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But if we assume that the internal variables are atomic
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coordinates in lattice-vector units and coefficients of plane-wave
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basis functions in a norm-conserving context, it follows that
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$\partial p_i/\partial\emn=0$. Thus
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%
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\beq
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\sigma^\F_{\mu\nu}=
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\frac{1}{\O}\,\frac{d\F}{d\emn}=
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\frac{1}{\O}\,\frac{\partial E}{\partial\emn} = \sigma^E_{\mu\nu}
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\eeq
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%
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which is just the stress tensor appearing in the usual KS theory.
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In the case of USPP or PAW approaches, $\partial p_i/\partial\emn$
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does not vanish, and augmentation terms need to be included.
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For the internal energy, we again use the Hellmann-Feynman argument
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to write $dU/d\emn=\partial U/\partial d\emn$. Now the natural
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variable being held fixed is $d$, and again $p$ is unchanged under
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a homogeneous strain if the internal variables are chosen properly,
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and since $d_i=\ee_i+p_i$, this means $\ee$ is also fixed (while
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$\eb$ is not). We choose to write Eq.~(\ref{eq:fixdred}) as
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%
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\beq
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U(\eta,d)=E+\too\,\gg\,\ee_i\,\ee_j
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\eeq
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%
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so that, using Eqs.~(\ref{AA}) and (\ref{BB}),
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%
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\beq
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\sigma^U_{\mu\nu}=
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\frac{1}{\O}\,\frac{dU}{d\emn}
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= \frac{1}{\O}\,\frac{\partial E}{\partial\emn}
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+\,\frac{2\pi}{\O^2}\,
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\Big[\,
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2\,a_{i\mu}\,a_{j\nu}\,\ee_i\,\ee_j -\delta_{\mu\nu}\,\gg\,\ee_i\,\ee_i
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\,\Big]
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\eeq
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%
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or
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%
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\beq
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\sigma^U_{\mu\nu}=\sigma^{\rm KS}_{\mu\nu}+\,\frac{1}{8\pi}\,
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\Big[\, 2\,\E_\mu\,\E_\nu - \delta_{\mu\nu}\,\E^2 \,\Big]
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\eeq
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%
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where the second term is just the Maxwell stress tensor arising from the
|
|
macroscopic electric field. It is straightforward to show that
|
|
$\sigma^{\Ft}=\sigma^U$. Thus, there are basically two stress
|
|
tensors, one ($\sigma^\F_{\mu\nu}=\sigma^E_{\mu\nu}$) that does not include
|
|
the Maxwell stress, and another ($\sigma^{\Ft}=\sigma^U$) that does.
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|
|
|
%=======================================
|
|
\section{\ABINIT\ implementation}
|
|
%=======================================
|
|
|
|
In the \ABINIT\ implementation, $\Ft$ and $U$ have been chosen as
|
|
the energy functionals for fixed electric field or fixed electric
|
|
displacement field cases, respectively. The corresponding
|
|
fields are the reduced variables $\eb_i$ or $d_i$, in
|
|
units of a.u. Therefore, the stress tensor includes the Maxwell
|
|
stress. The ion positions and cell parameters can be optimized
|
|
either under fixed $\eb_i$ or fixed $d_i$ boundary conditions.
|
|
This mode of operation, in which the user inputs target reduced
|
|
fields for the constrained calculation, is the recommended one
|
|
when the lattice vectors are going to be relaxed.
|
|
|
|
When the cell parameters are \textit{not} going to be relaxed, it
|
|
may be more convenient to work with the unreduced field variables
|
|
$\EE$ or $\D$ instead; \ABINIT\ also allows this option, in which
|
|
the unreduced target field is input directly (in a.u.).
|
|
|
|
The \ABINIT\ implementation does also allow calculations at fixed
|
|
unreduced $\EE$ or $\D$ with relaxation of the cell parameters,
|
|
but this option should be used with caution. It is important to
|
|
note that the energy functionals of Eq.~(\ref{eq:fixeb})
|
|
and Eq.~(\ref{eq:fixdred}) are still used in these cases.
|
|
Thus, when working at fixed $\EE$ for example, the code
|
|
searches for a value of $\eb_i$ such that the equilibrium
|
|
structure at fixed $\eb_i$ has the unreduced field $\EE$ matching
|
|
the target one. This procedure is not variational in the usual
|
|
sense. During such a run, the reported forces and
|
|
stresses that are used to guide the minimization are not, in
|
|
principle, equal to the numerical derivatives of the energy
|
|
functional. For these reasons, it is recommended to choose
|
|
the reduced-field options when relaxing the cell parameters
|
|
along with the internal coordinates.
|
|
|
|
Relaxed-cell calculations at fixed $\E$ and $D$ along
|
|
one dimension were implemented first by M.~Stengel in a private
|
|
code package ({\tt LAUTREC}) as described in Ref.~\cite{ssv}
|
|
and references therein. Tests of the current \ABINIT\
|
|
implementation (which supports fixed three-dimensional $\EE$ or
|
|
$\D$) were presented in Ref.~\cite{hv}, showing excellent agreement
|
|
with the {\tt LAUTREC} implementation.
|
|
|
|
|
|
%===============================
|
|
%===============================
|
|
\begin{thebibliography}{99}
|
|
%===============================
|
|
%===============================
|
|
\bibitem{siv}
|
|
I. Souza, J. \'{I}\~{n}iguez, and D. Vanderbilt, Phys. Rev. Lett. {\bf 89},
|
|
117602 (2002).
|
|
|
|
\bibitem{ssv}
|
|
Massimiliano Stengel, Nicola A. Spaldin, and David Vanderbilt,
|
|
Nat Phys {\bf 5}, 304 (2009).
|
|
|
|
\bibitem{abinit} {\sf ABINIT} is a common project of the
|
|
Universit\'{e} Catholique de Louvain, Corning Incorporated, and
|
|
other contributors (https://www.abinit.org). X. Gonze, J.-M.
|
|
Beuken, R. Caracas, F. Detraux, M. Fuchs, G.-M. Rignanese, L.
|
|
Sindic, M. Verstraete, G. Zerah, F. Jollet, M. Torrent, A.
|
|
Roy, M. Mikami, Ph. Ghosez, J.-Y. Raty, D.C. Allan, Comput.
|
|
Mater. Sci. {\bf 25}, 478-492 (2002).
|
|
|
|
\bibitem{kv}
|
|
R.~D. King-Smith, David Vanderbilt, Phys. Rev. B, {\bf 47},R1651,(1993).
|
|
|
|
\bibitem{proper}
|
|
D. Vanderbilt, J. Phys. Chem. Solids {\bf 61}, 147 (2000).
|
|
|
|
\bibitem{wvh}
|
|
X. Wu, D. Vanderbilt, and D.R. Hamann, Phys. Rev. B {\bf 72}, 035105 (2005).
|
|
|
|
\bibitem{hv} Jiawang Hong and David Vanderbilt, Phys. Rev. B
|
|
{\bf 84}, 115107 (2011).
|
|
|
|
|
|
%\bibitem{dieguez}
|
|
%O. Di\'eguez and D. Vanderbilt, Phys. Rev. Lett. {\bf 96}, 056401 (2006).
|
|
|
|
%\bibitem{umari}
|
|
%P. Umari and A. Pasquarello, Phys. Rev. Lett. {\bf 89}, 157602 (2002).
|
|
|
|
%\bibitem{ksv}
|
|
%R.D. King-Smith and D. Vanderbilt, Phys. Rev. {\bf 47}, 1651 (1993).
|
|
|
|
|
|
|
|
\end{thebibliography}
|
|
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|
\end {document}
|